Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
نویسندگان
چکیده
Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime ~0.06 ns! for a single quantum well structure, while an increasingly long decay lifetime is measured for multiquantum wells as more quantum wells are incorporated into the structure. Temperature-dependent lifetime measurements show that a nonradiative recombination mechanism activates above 45 K in the single quantum well but is less important in the multiquantum wells. © 1998 American Institute of Physics. @S0003-6951~98!02209-8#
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